TOSHIBA TK6R9P08QM,RQ

TOSHIBA · FETs & Power MOSFETs · MPN TK6R9P08QM,RQ

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)39nC@10V
Output Capacitance(Coss)700pF
Current - Continuous Drain(Id)62A
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation89W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)5.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.7nF
TypeN-Channel

Technical details

N-Channel 80V 62A 89W Surface Mount DPAK

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