TOSHIBA · FETs & Power MOSFETs · MPN TK6R8A08QM,S4X
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 39nC@10V |
| Current - Continuous Drain(Id) | 58A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 41W |
| RDS(on) | 6.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.7nF |
80V 58A 3.5V 41W 6.8mΩ@10V 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS