TOSHIBA · FETs & Power MOSFETs · MPN TK6R7P06PL,RQ(S2
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 26nC@10V |
| Output Capacitance(Coss) | 350pF |
| Current - Continuous Drain(Id) | 46A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 66W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 6.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.99nF |
| Vgs | ±20V |
| Type | N-Channel |
N-Channel 60V 46A 66W Surface Mount DPAK