TOSHIBA TK6R7P06PL,RQ(S2

TOSHIBA · FETs & Power MOSFETs · MPN TK6R7P06PL,RQ(S2

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)26nC@10V
Output Capacitance(Coss)350pF
Current - Continuous Drain(Id)46A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation66W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)6.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.99nF
Vgs±20V
TypeN-Channel

Technical details

N-Channel 60V 46A 66W Surface Mount DPAK

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