TOSHIBA · FETs & Power MOSFETs · MPN TK6Q60W,S1VQ
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 12nC@10V |
| Current - Continuous Drain(Id) | 6.2A |
| Gate Threshold Voltage (Vgs(th)) | 3.7V |
| Pd - Power Dissipation | 60W |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 390pF |
600V 6.2A 3.7V 60W 1 N-channel IPAK Single FETs, MOSFETs RoHS