TOSHIBA · FETs & Power MOSFETs · MPN TK6A80E,S4X(S
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| Drain to Source Voltage | 800V |
|---|---|
| Configuration | - |
| Gate Charge(Qg) | 32nC@10V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 18W |
| RDS(on) | 1.7Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.35nF |
| Type | N-Channel |
N-Channel 800V 6A 18W Through Hole TO-220SIS