TOSHIBA · FETs & Power MOSFETs · MPN TK6A65W,S5X
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| Gate Charge(Qg) | 11nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 5.8A |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | - |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 390pF |
650V 5.8A 3.5V 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS