TOSHIBA · FETs & Power MOSFETs · MPN TK6A65D(STA4,Q,M)
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 45W |
| RDS(on) | 1.11Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.05nF |
650V 4V 45W 1.11Ω@10V 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS