TOSHIBA TK6A53D(STA4,Q,M)

TOSHIBA · FETs & Power MOSFETs · MPN TK6A53D(STA4,Q,M)

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Specifications

Drain to Source Voltage525V
Gate Charge(Qg)12nC@10V
Current - Continuous Drain(Id)6A
Gate Threshold Voltage (Vgs(th))4.4V
Pd - Power Dissipation35W
RDS(on)1.3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)600pF

Technical details

525V 6A 4.4V 35W 1.3Ω@10V 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS

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