TOSHIBA · FETs & Power MOSFETs · MPN TK6A50D(STA4,Q,M)
No reviews yet — be the first to review TOSHIBA TK6A50D(STA4,Q,M).
| Gate Charge(Qg) | 11nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | - |
| Gate Threshold Voltage (Vgs(th)) | 4.4V |
| Pd - Power Dissipation | 35W |
| RDS(on) | 1.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 540pF |
500V 4.4V 35W 1.4Ω@10V 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS