TOSHIBA · FETs & Power MOSFETs · MPN TK65S04N1L,LXHQ
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| Output Capacitance(Coss) | - |
|---|---|
| Pd - Power Dissipation | 107W |
| Configuration | - |
| Gate Charge(Qg) | 39nC@10V |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| RDS(on) | 4.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.55nF |
107W 40V 65A 2.5V 4.3mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS