TOSHIBA · FETs & Power MOSFETs · MPN TK65E10N1,S1X
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| Gate Charge(Qg) | 81nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 950pF |
| Current - Continuous Drain(Id) | 148A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 192W |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| RDS(on) | 4.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.4nF |
| Type | N-Channel |
N-Channel 100V 148A Through Hole TO-220