TOSHIBA · FETs & Power MOSFETs · MPN TK65A10N1,S4X
No reviews yet — be the first to review TOSHIBA TK65A10N1,S4X.
| Gate Charge(Qg) | 81nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 65A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 45W |
| RDS(on) | 4.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.4nF |
100V 65A 4V 45W 4.8mΩ@10V 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS