TOSHIBA TK62Z60X,S1F

TOSHIBA · FETs & Power MOSFETs · MPN TK62Z60X,S1F

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)135nC@10V
Current - Continuous Drain(Id)61.8A
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation400W
RDS(on)40mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.5nF

Technical details

600V 61.8A 3.5V 400W 40mΩ@10V 1 N-channel TO-247-4L Single FETs, MOSFETs RoHS

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