TOSHIBA · FETs & Power MOSFETs · MPN TK62N60W5,S1VF(S
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| Gate Charge(Qg) | 205nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 140pF |
| Current - Continuous Drain(Id) | 61.8A |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 400W |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| RDS(on) | 45mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.5nF |
600V 61.8A 4.5V 400W 45mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS