TOSHIBA · FETs & Power MOSFETs · MPN TK62N60W,S1VF
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 180nC@10V |
| Current - Continuous Drain(Id) | 61.8A |
| Gate Threshold Voltage (Vgs(th)) | 3.7V |
| Pd - Power Dissipation | 400W |
| RDS(on) | 40mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.5nF |
600V 61.8A 3.7V 400W 40mΩ@10V 1 N-channel TO-247 Single FETs, MOSFETs RoHS