TOSHIBA · FETs & Power MOSFETs · MPN TK60F10N1L,LXGQ
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 60A |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 205W |
| RDS(on) | 6.11mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.32nF |
100V 60A 3.5V 205W 6.11mΩ@10V 1 N-channel TO-220SM(W) Single FETs, MOSFETs RoHS