TOSHIBA · FETs & Power MOSFETs · MPN TK5Q60W,S1VQ
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| Gate Charge(Qg) | 10.5nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 5.4A |
| Gate Threshold Voltage (Vgs(th)) | 3.7V |
| Pd - Power Dissipation | 60W |
| RDS(on) | 900mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 380pF |
600V 5.4A 3.7V 60W 900mΩ@10V 1 N-channel IPAK Single FETs, MOSFETs RoHS