TOSHIBA · FETs & Power MOSFETs · MPN TK5A65W,S5X
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| Gate Charge(Qg) | 10.5nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 5.2A |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 30W |
| RDS(on) | 1.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 380pF |
650V 5.2A 3.5V 30W 1.2Ω@10V 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS