TOSHIBA · FETs & Power MOSFETs · MPN TK5A65DA(STA4,Q,M)
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| Gate Charge(Qg) | 16nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 4.5A |
| Gate Threshold Voltage (Vgs(th)) | 4.4V |
| Pd - Power Dissipation | 35W |
| RDS(on) | 1.67Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 700pF |
650V 4.5A 4.4V 35W 1.67Ω@10V 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS