TOSHIBA · FETs & Power MOSFETs · MPN TK58E06N1,S1X(S
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 46nC@10V |
| Output Capacitance(Coss) | 1.12nF |
| Current - Continuous Drain(Id) | 105A |
| Gate Threshold Voltage (Vgs(th)) | 2V;4V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 4.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.4nF |
| Type | N-Channel |
60V 105A 110W 4.4mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS