TOSHIBA · FETs & Power MOSFETs · MPN TK58E06N1,S1X
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 46nC@10V |
| Current - Continuous Drain(Id) | 58A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 4.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.4nF |
N-Channel 60V 58A 110W Through Hole TO-220