TOSHIBA TK560P60Y,RQ

TOSHIBA · FETs & Power MOSFETs · MPN TK560P60Y,RQ

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)14.5nC@10V
Output Capacitance(Coss)18pF
Current - Continuous Drain(Id)7A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)560mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)380pF
TypeN-Channel

Technical details

N-Channel 600V 7A 60W Surface Mount DPAK

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