TOSHIBA · FETs & Power MOSFETs · MPN TK560A65Y,S4X(S
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| Gate Charge(Qg) | 14.5nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 7A |
| Output Capacitance(Coss) | 18pF |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF |
| RDS(on) | 430mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 380pF |
| Type | N-Channel |
N-Channel 650V Through Hole TO-220SIS