TOSHIBA · FETs & Power MOSFETs · MPN TK55S10N1,LQ
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| Gate Charge(Qg) | 49nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.52nF |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 157W |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF |
| RDS(on) | 6.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.28nF |
| Type | - |
100V 55A 4V 157W 6.5mΩ@10V 1 N-channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS