TOSHIBA · FETs & Power MOSFETs · MPN TK4R3A06PL,S4X
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 48.2nC@10V |
| Current - Continuous Drain(Id) | 68A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 36W |
| RDS(on) | 7.2mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.28nF |
60V 68A 2.5V 36W 7.2mΩ@4.5V 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS