TOSHIBA · FETs & Power MOSFETs · MPN TK4R1A10PL,S4X
No reviews yet — be the first to review TOSHIBA TK4R1A10PL,S4X.
| Gate Charge(Qg) | 104nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 80A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 54W |
| RDS(on) | 4.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.32nF |
100V 80A 2.5V 54W 4.1mΩ@10V 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS