TOSHIBA · FETs & Power MOSFETs · MPN TK4P60D,RQ(S
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| Gate Charge(Qg) | 12nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 4A |
| Output Capacitance(Coss) | 70pF |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 1.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 600pF |
| Type | N-Channel |
N-Channel 600V 4A Surface Mount TO-252(DPAK)