TOSHIBA · FETs & Power MOSFETs · MPN TK4P60D,RQ
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 12nC@10V |
| Current - Continuous Drain(Id) | 4A |
| Gate Threshold Voltage (Vgs(th)) | 4.4V |
| Pd - Power Dissipation | 100W |
| RDS(on) | 1.7Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 600pF |
600V 4A 4.4V 100W 1.7Ω@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS