TOSHIBA · FETs & Power MOSFETs · MPN TK4K1A60F,S4X
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 8nC@10V |
| Current - Continuous Drain(Id) | 2A |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 30W |
| RDS(on) | 4.1Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 270pF |
600V 2A 30W 4.1Ω@10V 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS