TOSHIBA · FETs & Power MOSFETs · MPN TK4A80E,S4X(S
No reviews yet — be the first to review TOSHIBA TK4A80E,S4X(S.
| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 4A |
| Output Capacitance(Coss) | 55pF |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 35W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 2.8Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 650pF |
| Type | N-Channel |
N-Channel 800V Through Hole TO-220SIS-3