TOSHIBA · FETs & Power MOSFETs · MPN TK4A60DB(S4PHI,X,S
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 11nC@10V |
| Output Capacitance(Coss) | 60pF |
| Current - Continuous Drain(Id) | 3.7A |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 35W |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| RDS(on) | 1.6Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 540pF |
| Type | N-Channel |
N-Channel 600V 3.7A 35W Through Hole ITO-220S-3