TOSHIBA TK4A60DB(S4PHI,X,S

TOSHIBA · FETs & Power MOSFETs · MPN TK4A60DB(S4PHI,X,S

No reviews yet — be the first to review TOSHIBA TK4A60DB(S4PHI,X,S.

Specifications

Drain to Source Voltage600V
Gate Charge(Qg)11nC@10V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)3.7A
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)1.6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)540pF
TypeN-Channel

Technical details

N-Channel 600V 3.7A 35W Through Hole ITO-220S-3

Related FETs & Power MOSFETs