TOSHIBA TK4A50D(STA4,Q,M)

TOSHIBA · FETs & Power MOSFETs · MPN TK4A50D(STA4,Q,M)

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Specifications

Gate Charge(Qg)9nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)4A
Gate Threshold Voltage (Vgs(th))4.4V
Pd - Power Dissipation30W
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)380pF

Technical details

500V 4A 4.4V 30W 2Ω@10V 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS

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