TOSHIBA · FETs & Power MOSFETs · MPN TK49N65W5,S1F
No reviews yet — be the first to review TOSHIBA TK49N65W5,S1F.
| Gate Charge(Qg) | 185nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 140pF |
| Current - Continuous Drain(Id) | 49.2A |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 400W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 57mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.5nF |
| Vgs | ±30V |
650V 49.2A 4.5V 400W 57mΩ@10V 1 N-channel TO-247 Single FETs, MOSFETs RoHS