TOSHIBA · FETs & Power MOSFETs · MPN TK46E08N1,S1X
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 37nC@10V |
| Current - Continuous Drain(Id) | 80A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 103W |
| RDS(on) | 8.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.5nF |
80V 80A 4V 103W 8.4mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS