TOSHIBA · FETs & Power MOSFETs · MPN TK46A08N1,S4X(S
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| Gate Charge(Qg) | 37nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 80A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 35W |
| RDS(on) | 8.4mΩ@10V |
80V 80A 4V 35W 8.4mΩ@10V Single FETs, MOSFETs RoHS