TOSHIBA TK40S06N1L,LXHQ

TOSHIBA · FETs & Power MOSFETs · MPN TK40S06N1L,LXHQ

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)26nC@10V
Current - Continuous Drain(Id)40A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation88.2W
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)1.65nF

Technical details

60V 40A 2.5V 88.2W 1 N-channel DPAK Single FETs, MOSFETs RoHS

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