TOSHIBA · FETs & Power MOSFETs · MPN TK40S06N1L,LQ
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 26nC@10V |
| Current - Continuous Drain(Id) | 40A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 88.2W |
| RDS(on) | 10.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.65nF |
60V 40A 2.5V 88.2W 10.5mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS