TOSHIBA · FETs & Power MOSFETs · MPN TK40E06N1,S1X(S
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 580pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 67W |
| RDS(on) | 8.4mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.7nF |
| Type | N-Channel |
N-Channel 60V Through Hole TO-220