TOSHIBA · FETs & Power MOSFETs · MPN TK40E06N1,S1X
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 40A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 67W |
| RDS(on) | 10.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.7nF |
60V 40A 4V 67W 10.4mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS