TOSHIBA · FETs & Power MOSFETs · MPN TK3R3E08QM,S1X
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 110nC@10V |
| Current - Continuous Drain(Id) | 120A |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 230W |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.67nF |
80V 120A 3.5V 230W 1 N-channel TO-220 Single FETs, MOSFETs RoHS