TOSHIBA TK3R1P04PL,RQ

TOSHIBA · FETs & Power MOSFETs · MPN TK3R1P04PL,RQ

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)58A
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation87W
RDS(on)3.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.67nF

Technical details

40V 58A 2.4V 87W 3.1mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS

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