TOSHIBA TK3P80E,RQ

TOSHIBA · FETs & Power MOSFETs · MPN TK3P80E,RQ

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Specifications

Gate Charge(Qg)12nC@10V
Drain to Source Voltage800V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)3A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation80W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)4.9Ω@10V
Number1 N-channel
Input Capacitance(Ciss)500pF
Vgs±30V

Technical details

N-Channel 800V 3A 80W Surface Mount DPAK

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