TOSHIBA TK39N60X,S1F

TOSHIBA · FETs & Power MOSFETs · MPN TK39N60X,S1F

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)85nC@10V
Current - Continuous Drain(Id)38.8A
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation270W
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)4.1nF

Technical details

600V 38.8A 3.5V 270W 1 N-channel TO-247 Single FETs, MOSFETs RoHS

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