TOSHIBA TK39N60W5,S1VF

TOSHIBA · FETs & Power MOSFETs · MPN TK39N60W5,S1VF

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)135nC@10V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)38.8A
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation270W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)62mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.1nF
TypeN-Channel

Technical details

N-Channel 600V 38.8A 270W Through Hole TO-247

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