TOSHIBA TK39N60W,S1VF(S

TOSHIBA · FETs & Power MOSFETs · MPN TK39N60W,S1VF(S

No reviews yet — be the first to review TOSHIBA TK39N60W,S1VF(S.

Specifications

Gate Charge(Qg)110nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)38.8A
Gate Threshold Voltage (Vgs(th))3.7V
Pd - Power Dissipation270W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)65mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.1nF
TypeN-Channel

Technical details

N-Channel 600V 38.8A 270W Through Hole TO-247-3

Related FETs & Power MOSFETs