TOSHIBA · FETs & Power MOSFETs · MPN TK39J60W,S1VQ
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 110nC@10V |
| Current - Continuous Drain(Id) | 38.8A |
| Gate Threshold Voltage (Vgs(th)) | 3.7V |
| Pd - Power Dissipation | 270W |
| RDS(on) | 65mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.1nF |
600V 38.8A 3.7V 270W 65mΩ@10V 1 N-channel TO-3P(N) Single FETs, MOSFETs RoHS