TOSHIBA · FETs & Power MOSFETs · MPN TK35N65W5,S1F
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| Gate Charge(Qg) | 115nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 35A |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 270W |
| RDS(on) | 95mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.1nF |
650V 35A 4.5V 270W 95mΩ@10V 1 N-channel TO-247 Single FETs, MOSFETs RoHS