TOSHIBA · FETs & Power MOSFETs · MPN TK34E10N1,S1X(S
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| Gate Charge(Qg) | 38nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 75A |
| Output Capacitance(Coss) | 450pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 103W |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF |
| RDS(on) | 7.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.6nF |
| Type | N-Channel |
N-Channel 100V Through Hole TO-220