TOSHIBA · FETs & Power MOSFETs · MPN TK33S10N1Z,LQ
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| Gate Charge(Qg) | 28nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.07nF |
| Current - Continuous Drain(Id) | 33A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 9.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.05nF |
| Type | N-Channel |
N-Channel 100V 33A 125W Surface Mount DPAK