TOSHIBA · FETs & Power MOSFETs · MPN TK32E12N1,S1X
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| Gate Charge(Qg) | 34nC@10V |
|---|---|
| Drain to Source Voltage | 120V |
| Output Capacitance(Coss) | 330pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 98W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 13.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
| Type | - |
120V 60A 4V 98W 13.8mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS